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IRG4PC30FPBF

Part Number	IRG4PC30FPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Feb 4, 2016
Detailed Description	PD -94920 IRG4PC30FPbF INSULATED GATE BIPOLAR TRANSISTOR Features Fast: Optimized for medium operating frequencies (...
Datasheet	IRG4PC30FPBF PDF File

Overview

PD -94920 IRG4PC30FPbF INSULATED GATE BIPOLAR TRANSISTOR Features Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free C G E n-channel Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Fast Speed IGBT VCES = 600V VCE(on) typ.
= 1.
59V @VGE = 15V, IC = 17A Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power D...

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IRG4PC30FPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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