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NCE2006NE

Part Number	NCE2006NE
Manufacturer	NCE Power Semiconductor
Description	N-Channel Enhancement Mode Power MOSFET
Published	Feb 5, 2016
Detailed Description	http://www.ncepower.com Pb Free Product NCE2006NE NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2006N...
Datasheet	NCE2006NE PDF File

Overview

http://www.
ncepower.
com Pb Free Product NCE2006NE NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2006NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.
5V RDS(ON) < 21mΩ @ VGS=4.
5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Application ●PWM application ●Load switch Marking and pin assignment SOT23-6L top view Package Marking and Ordering Informa...

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NCE2006NE N-Channel Enhancement Mode Power MOSFET - NCE Power Semiconductor

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