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11N50K-MT

Unisonic Technologies
Part Number 11N50K-MT
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Feb 7, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 11N50K-MT Preliminary 11A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N50K-M...
Datasheet PDF File 11N50K-MT PDF File

11N50K-MT
11N50K-MT

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 11N50K-MT Preliminary 11A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N50K-MT is a N-channel enhancement mode power MOSFET.
It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance.
It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 11N50K-MT is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.
 FEATURES * RDS(ON) < 0.
55Ω @ VGS = 10 V, ID = 5.
5 A * Fast Switching * With 100% Avalanche Tested  SYMBOL 2.
Drain Power MOSFET 1.
Gate 3.
Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11N50KL-TF2-T 11N50KG-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F2 Pin Assignment 123 GD S Packing Tube  MARKING www.
unisonic.
com.
tw Copyright © 2017 Unisonic Technologies Co.
, Ltd 1 of 5 QW-R502-B25.
e 11N50K-MT Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage Gate to Source Voltage VDSS VGSS 500 ±30 V V Continuous Drain Current TC=25°C TC=100°C ID 11 (Note 2) 7 (Note 2) A A Pulsed Drain Current (Note 3) Single Pulsed Avalanche Energy(Note 4) IDM EAS 44 (Note 2) 500 A mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 4.
5 V/ns Power Dissipation PD 50 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Drain current limited by maximum junction temperature 3.
Repetitive Rating : Pulse width limited by maximum junction temperature 4.
L=8.
26mH, IAS=11A, VDD= 50V, RG=25Ω, Starting TJ=25°C 5.
ISD ≤11A, di/dt ≤200A/μs, VDD ≤ BVD...


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