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IGC99T120T6RH

Infineon
Part Number IGC99T120T6RH
Manufacturer Infineon
Description IGBT
Published Feb 7, 2016
Detailed Description IGC99T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology • low VCE(sat) • soft turn off • ...
Datasheet PDF File IGC99T120T6RH PDF File

IGC99T120T6RH
IGC99T120T6RH

Overview
IGC99T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology • low VCE(sat) • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • medium / high power modules Applications: • medium / high power drives C G E Chip Type VCE ICn Die Size IGC99T120T6RH 1200V 100A 10.
39 x 9.
5 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 10.
39 x 9.
5 7.
987 x 8.
923 1.
31 x 0.
811 mm 2 98.
7 / 76.
1 140 µm 150 mm 90 grd 140 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm ∅ 0.
65mm ; max 1.
2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7683 A, Edition 0.
9 , 24.
11.
2006 MAXIMUM RATINGS Parameter IGC99T120T6RH Symbol Value Uni t Collector-Emitter voltage , Tj=25 °C DC collector current, limited by Tjmax VC E IC 1200 1) V A Pulsed collector current, tp limited by Tjmax Ic p u l s 300 A Gate -Emitter voltage VGE ±20 V Operating junction temperature Short circuit data 2 ) V GE = 15V, VCC = 800V, Tvj = 150°C Tj tp -40 .
.
.
+175 10 °C µs Reverse bias safe operating area 2 ) (RBSOA) 1) depending on thermal properties of assembly IC max = 200A, VCE max = 1200V, Tvj max= 150°C 2) not subject to production test - verified by design/characterization STATIC CHARACTERISTICS (tested on wafer ), Tj =25 °C Parameter Symbol Conditions Value Unit min.
typ.
max.
Collector-Emitter breakdown voltage Collector-Emitter saturation voltage Gate -Emitter threshold voltage Zero gate voltage collector current Gate -Emitter leakage current Integrated gate resistor V(B...


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