CEP85N75V/CEB85N75V
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
75V, 85A, RDS(ON) = 12mΩ @VGS = 12V. RDS(ON) = 13mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
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CEB SERIES TO-263(DD-PAK)
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