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CED95P04

CET
Part Number CED95P04
Manufacturer CET
Description P-Channel MOSFET
Published Feb 9, 2016
Detailed Description CED95P04/CEU95P04 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -77A, RDS(ON) =8.6mΩ ...
Datasheet PDF File CED95P04 PDF File

CED95P04
CED95P04

Overview
CED95P04/CEU95P04 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -77A, RDS(ON) =8.
6mΩ @VGS = -10V.
RDS(ON) =12mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C Drain Current-Pulsed a @ TC = 100 C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit VDS -40 VGS ±20 -77 ID -48 IDM -308 73.
5 PD 0.
59 EAS IAS TJ,Tstg 320 80 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
7 62.
5 Units V ...


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