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SIHFZ20

Vishay
Part Number SIHFZ20
Manufacturer Vishay
Description Power MOSFET
Published Feb 10, 2016
Detailed Description Power MOSFET IRFZ20, SiHFZ20 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Datasheet PDF File SIHFZ20 PDF File

SIHFZ20
SIHFZ20


Overview
Power MOSFET IRFZ20, SiHFZ20 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 50 VGS = 10 V 17 9.
0 3.
0 Single 0.
10 TO-220AB D S D G G S N-Channel MOSFET FEATURES • Extremely Low RDS(on) • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • Excellent Temperature Stability • Parts Per Million Quality • Compliant to RoHS Directive 2002/95/EC DESCRIPTION The technology has expanded its product base to serve the low voltage, very low RDS(on) MOSFET transistor requirements.
Vishay’s highly efficient geometry and unique processing have been combined to create the lowest on resistance per device performance.
In addition to this feature all have documented reliability and parts per million quality! The transistor also offer all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and in systems that are operated from low voltage batteries, such as automotive, portable equipment, etc.
ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRFZ20PbF SiHFZ20-E3 IRFZ20 SiHFZ20 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltagea Gate-Source Voltagea Continuous Drain Current Pulsed Drain Currentb VGS at 10 V TC = 25 °C TC = 100 °C Single Pulse Avalanche Energyc Linear Derating Factor (see fig.
16) Maximum Power Dissipation (see fig.
16) Operating Junction and Storage Temperature Range TC = 25 °C Soldering Recommendations (Peak Temperature) for 10 s SYMBOL VDS VGS ID IDM EAS PD TJ, Tstg LIMIT 50 ± 20 15 10 60 5 0.
32 40 - 55 to + 150 300 (0.
063" (1.
6 mm) from case Notes a.
TJ = 25 °C to 150 °C b.
Repeditive rating: Pulse width limited by max.
junction temperature.
See transient temperature impedance...


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