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IRLD120

Vishay
Part Number IRLD120
Manufacturer Vishay
Description Power MOSFET
Published Feb 10, 2016
Detailed Description Power MOSFET IRLD120, SiHLD120 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
Datasheet PDF File IRLD120 PDF File

IRLD120
IRLD120

Overview
Power MOSFET IRLD120, SiHLD120 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5.
0 V 12 3.
0 7.
1 Single 0.
27 HVMDIP D S G D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.
1" pin centers.
The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
HVMDIP IRLD120PbF SiHLD120-E3 IRLD120 SiHLD120 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 5.
0 V TA = 25 °C TA = 100 °C Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TA = 25 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 25 V, starting TJ = 25 °C, L = 153 mH, Rg = 25 , IAS = 2.
6 A (see fig.
12).
c.
ISD  9.
2 A, dI/dt  110 A/µs, VDD  VDS, TJ  175 °C.
d.
1.
6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91310 S10-2465-Rev.
C, 08-Nov-10 LIMIT 100 ± 10 1.
3 0.
94 10 0.
0083 690 1.
3 0.
13 1.
3 5.
5 - 55 ...


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