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SIR882DP

Vishay
Part Number SIR882DP
Manufacturer Vishay
Description N-Channel 100-V (D-S) MOSFET
Published Feb 10, 2016
Detailed Description New Product N-Channel 100 V (D-S) MOSFET SiR882DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.0087 at VG...
Datasheet PDF File SIR882DP PDF File

SIR882DP
SIR882DP

Overview
New Product N-Channel 100 V (D-S) MOSFET SiR882DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.
0087 at VGS = 10 V 100 0.
0094 at VGS = 7.
5 V 0.
0115 at VGS = 4.
5 V PowerPAK® SO-8 ID (A)a 60 60 60 Qg (Typ.
) 18.
3 nC 6.
15 mm D 8D 7 D 6 D 5 S 1S 5.
15 mm 2 S 3G 4 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Primary Side Switch • Telecom/Server 48 V, Full/Half-Bridge dc-to-dc • Industrial D G Bottom View Ordering Information: SiR882DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse ...


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