N-Channel 100-V (D-S) MOSFET
Description
N-Channel 100 V (D-S) MOSFET
SiS892ADN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () (Max.) 0.033 at VGS = 10 V 0.036 at VGS = 7.5 V 0.047 at VGS = 4.5 V
ID (A)f 28 26.8 23.5
Qg (Typ.) 6.1 nC
FEATURES TrenchFET® Power MOSFET
100 % Rg and UIS Tested Capable of Operating with 5 V Gate Drive
Material categorization: For definitions of ...
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