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SIS376DN

Part Number	SIS376DN
Manufacturer	Vishay
Description	N-Channel MOSFET
Published	Feb 12, 2016
Detailed Description	N-Channel 20 V (D-S) MOSFET SiS376DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.0058 at VGS = 10 V...
Datasheet	SIS376DN PDF File

Overview

N-Channel 20 V (D-S) MOSFET SiS376DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max.
0.
0058 at VGS = 10 V 20 0.
0084 at VGS = 4.
5 V ID (A)a 35 35 Qg (Typ.
) 7.
7 nC PowerPAK® 1212-8 3.
30 mm D 8D 7 D 6 D 5 S 1S 3.
30 mm 2 S 3G 4 Bottom View Ordering Information: SiS376DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Note book PC - Synchronous Buck Converters - High Side • POL D G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t = 300 µs) IDM Avalanche Current Avalanche Energy L = 0.
1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum P...

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SIS376DN N-Channel MOSFET - Vishay

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