SiS778DN
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () Max. 0.0050 at VGS = 10 V 0.0062 at VGS = 4.5 V
ID (A)e 35 35
Qg (Typ.) 13.3 nC
PowerPAK 1212-8
3.30 mm
D 8D
7 D
6 D
5
S 1S
3.30 mm
2 S
3G
4
FEATURES Halogen-free According to IEC 61249-2-21
Definition SkyFET Monolithic TrenchFET®...
