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HWL30YRA

Hexawave
Part Number HWL30YRA
Manufacturer Hexawave
Description L-Band GaAs Power FET
Published Feb 14, 2016
Detailed Description Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Typical 16.5 dB Gain • 5V to 10V Operation Descript...
Datasheet PDF File HWL30YRA PDF File

HWL30YRA
HWL30YRA

Overview
Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Typical 16.
5 dB Gain • 5V to 10V Operation Description The HWL30YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.
It is presently offered in low cost ceramic package.
HWL30YRA L-Band GaAs Power FET Autumn 2002 V1 Outline Dimensions Absolute Maximum Ratings VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current IG Gate Current TCH Channel Temperature TSTG PT* Storage Temperature Power Dissipation * mounted on an infinite heat sink.
+15V -5V IDSS 3 mA 175°C -65 to +175°C 6W RA Package (Ceramic) Electrical Specifications (TA=25°C) f = 2400 MHz for all RF Tests Symb...


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