Power-Transistor
Description
OptiMOSTM-T2 Power-Transistor
Features N-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested
IPB180N10S4-03
Product Summary VDS RDS(on) ID
100 V 3.3 mW 180 A
PG-TO263-7-3
Type IPB180N10S4-03
Package PG-TO263-7-3
Marking 4N1003
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