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IPC042N03L3

Infineon
Part Number IPC042N03L3
Manufacturer Infineon
Description MOSFET
Published Feb 15, 2016
Detailed Description MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC042N03L3 DataS...
Datasheet PDF File IPC042N03L3 PDF File

IPC042N03L3
IPC042N03L3


Overview
MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC042N03L3 DataSheet Rev.
2.
5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC042N03L3 1Description •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPD040N03LG •AQL0.
65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 30 4.
01) 2.
78 x 1.
53 V mΩ mm2 Thickness 175 µm Drain Gate Source Type/OrderingCode IPC042N03L3 Package Chip Marking not defined RelatedLinks - 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS Min.
30 1 - Values Typ.
Max.
-- - 2.
2 -1 - 100 3.
72) 2.
32) 503) 503) 0.
83 1.
1 - 60 Unit Note/TestCondition V VGS=0V,ID=1mA V VDS=VGS,ID=250µA µA VGS=0V,VDS=30V nA VGS=20V,VDS=0V mΩ VGS=4.
5V,ID=2.
0A VGS=10V,ID=2.
0A V VGS=0V,IF=1A mJ ID =50 A, RGS =25 Ω 1) packaged in a DPAK using Al bond wire (see ref.
product) 2)typicalbaredieRDS(on);VGS=10Vwhenusedwith4x500µmAl-wedgedouble-stitchbonding 3) limited by wafer test-equipment Final Data Sheet 2 Rev.
2.
5,2014-07-25 3PackageOutlines OptiMOS™3PowerMOSTransistorChip IPC042N03L3 Figure1OutlineChip,dimensionsinµm Final Data Sheet 3 Rev.
2.
5,2014-07-25 OptiMOS™3PowerMOSTransistorChip IPC042N03L3 RevisionHistory IPC042N03L3 Revision:2014...



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