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IPC300N15N3R

Infineon
Part Number IPC300N15N3R
Manufacturer Infineon
Description MOSFET
Published Feb 15, 2016
Detailed Description MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC300N15N3R Data...
Datasheet PDF File IPC300N15N3R PDF File

IPC300N15N3R
IPC300N15N3R

Overview
MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC300N15N3R DataSheet Rev.
2.
6 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC300N15N3R 1Description •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP075N15N3G1) •AQL0.
65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 150 7.
52) 6x5 V mΩ mm2 Thickness 250 µm Drain Gate Source Type/OrderingCode IPC300N15N3R Package Chip Marking not defined RelatedLinks - 1) IPP075N15N3 G dynamic characterization does not include the internal added RG 2) packaged in a P-TO220-3-1 (see ref.
product) Final Data Sheet 2 Rev.
2.
6,2015-09-02 OptiMOS™3PowerMOSTransistorChip IPC300N15N3R 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Internal gate resistance Additional gate resistor Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD RG RGadd EAS Min.
150 2 13.
6 - Values Typ.
Max.
-- 34 0.
1 1 1 4.
91) 100 1002) 1.
0 1.
2 2.
3 - 17 20.
4 453) - Unit Note/TestCondition V VGS=0V,ID=1mA V VDS=VGS,ID=250µA µA VGS=0V,VDS=120V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=2.
0A V VGS=0V,IF=1A ΩΩmJ ID =30 A2) , RGS =25 Ω 1)typicalbaredieRDS(on) 2) limited by wafer test-equipment 3) Wafer tested.
For general avalanche capability refer to the datasheet of IPP075N15N3 G Final Data ...


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