DatasheetsPDF.com

UTM6006

UTC
Part Number UTM6006
Manufacturer UTC
Description 60V N-CHANNEL FAST SWITCHING MOSFET
Published Feb 15, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UTM6006 6.3A, 60V N-CHANNEL FAST SWITCHING MOSFET Power MOSFET  DESCRIPTION The UTC UT...
Datasheet PDF File UTM6006 PDF File

UTM6006
UTM6006


Overview
UNISONIC TECHNOLOGIES CO.
, LTD UTM6006 6.
3A, 60V N-CHANNEL FAST SWITCHING MOSFET Power MOSFET  DESCRIPTION The UTC UTM6006 is an N-Channel MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge.
The UTC UTM6006 is suitable for application in networking DC-DC power system and LCD/LED back light, etc.
 FEATURES * RDS(ON)< 18 mΩ @ VGS=10V, ID=6A RDS(ON) < 20 mΩ @ VGS=4.
5V, ID=4A * Low gate charge * Excellent CdV/dt effect decline * High switching speed  SYMBOL SOP-8 1 DFN-8(5x6)  ORDERING INFORMATION Ordering Number Package UTM6006G-S08-R SOP-8 UTM6006G-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 S S SGDDDD S S SGDDDD Packing Tape Reel Tape Reel  MARKING SOP-8 DFN-8(5×6) www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 7 QW-R502-B18.
D UTM6006 Power MOSFET  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous VGS @ 10V (Note 1) TA=25°C TA=70°C ID 6.
3 A 5.
0 A Pulsed (Note 2) IDM 32 A Avalanche Current Single Pulse Avalanche Energy (Note 3) Power Dissipation (TA=25°C) (Note 4) SOP-8 DFN-8(5×6) IAS EAS PD 28 A 67 mJ 1.
5 1.
92 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL CHARACTERISTICS (Note 1) PARAMETER SYMBOL RATINGS Junction to Ambient SOP-8 DFN-8(5×6) θJA 85 65 Junction to Case SOP-8 DFN-8(5×6) θJC 24 12 Notes: 1.
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.
The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3.
The EAS data shows Max.
rating.
The test condition is V...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)