FDB86102LZ N-Channel PowerTrench® MOSFET
FDB86102LZ
N-Channel PowerTrench® MOSFET
100 V, 30 A, 24 mΩ
May 2011
Features
General Description
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench
technologies Fa...
