MOSFET
Description
FDD10N20LZ — N-Channel UniFETTM MOSFET
FDD10N20LZ
N-Channel UniFETTM MOSFET
200 V, 7.6 A, 360 mΩ
Features
RDS(on) = 300 mΩ (Typ.) @ VGS = 10 V, ID = 3.8 A Low Gate Charge (Typ. 12 nC) Low Crss (Typ. 11 pF) 100% Avalanche Tested Improved dv/dt Capability
ESD Improved Capability
RoHS Compliant
Applications
Lighting Uninterruptible Power Supp...
Similar Datasheet
- FDD10N20LZ MOSFET - Fairchild Semiconductor