N-Channel MOSFET
Description
FDD86102 N-Channel Shielded Gate PowerTrench® MOSFET
FDD86102
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 36 A, 24 mΩ
March 2015
Features
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A High performance trench technology for extremely low rDS(on) ...
Fairchild Semiconductor
FDD86102 PDF File
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