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FDD86102LZ

Fairchild Semiconductor
Part Number FDD86102LZ
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Feb 15, 2016
Detailed Description FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSF...
Datasheet PDF File FDD86102LZ PDF File

FDD86102LZ
FDD86102LZ

Overview
FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDD86102LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 35 A, 22.
5 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 22.
5 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 31 mΩ at VGS = 4.
5 V, ID = 7 A „ HBM ESD protection level > 6 kV typical (Note 4) „ Very low Qg and Qgd compared to competing trench technologies „ Fast switching speed „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and switching loss.
G...


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