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F59D1G161A

Elite Semiconductor
Part Number F59D1G161A
Manufacturer Elite Semiconductor
Description 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
Published Feb 16, 2016
Detailed Description ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - ...
Datasheet PDF File F59D1G161A PDF File

F59D1G161A
F59D1G161A


Overview
ESMT Flash FEATURES  Voltage Supply: 1.
8V (1.
7 V ~ 1.
95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit  Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word  Page Read Operation - Page Size: (2K + 64) Byte (x8) Page Size: (1K + 32) Word (x16) - Random Read: 25us (Max.
) - Serial Access: 45ns (Min.
)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time - Program time: 250us (Typ.
) - Block Erase time: 2ms (Typ.
)  Command/Address/Data Multiplexed I/O Port F59D1G81A / F59D1G161A 1 Gbit (128M x 8/ 64M x 16) 1.
8V NAND Flash Memory  Hardware Data Protection - Program/Erase Lockout During Power Transitions  Reliable CMOS Floating Gate Technology - ECC Requirement: x8 - 1bit/528Byte, x16 - 1bit/264Word - Endurance: 100K Program/Erase Cycles - Data Retention: 10 Years  Command Register Operation  Automatic Page 0 Read at Power-Up Option - Boot from NAND support - Automatic Memory Download  NOP: 4 cycles  Cache Program Operation for High Performance Operation  Copy-Back Operation  EDO mode  OTP Operation  No Bad-Block-Erasing-Protect function (user should manage bad blocks before erasing) ORDERING INFORMATION Product ID x8: F59D1G81A -45TG F59D1G81A -45BG x16: F59D1G161A -45BG Speed 45 ns 45 ns 45 ns Package 48 pin TSOPI 63 ball BGA 63 ball BGA Comments Pb-free Pb-free Pb-free Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014 Revision: 1.
5 1/43 ESMT F59D1G81A / F59D1G161A GENERAL DESCRIPTION The device is a 128Mx8bit with spare 4Mx8bit capacity (or 64Mx16bit with spare 2Mx16bit capacity).
The device is offered in 1.
8V VCC Power Supply.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased independently...


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