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F59L512M81A

Part Number	F59L512M81A
Manufacturer	Elite Semiconductor
Description	512Mbit (64M x 8) 3.3V NAND Flash Memory
Published	Feb 16, 2016
Detailed Description	ESMT Flash FEATURES  Voltage Supply: 2.7V ~ 3.6V  Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register:...
Datasheet	F59L512M81A PDF File

Overview

ESMT Flash FEATURES  Voltage Supply: 2.
7V ~ 3.
6V  Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit  Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte  Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.
) - Serial Access: 25ns (Min.
)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time - Program time: 250us (Typ.
) - Block Erase time: 2ms (Typ.
)  Command/Address/Data Multiplexed I/O Port  Hardware Data Protection - Program/Erase Lockout During Power Transitions  Reliable CMOS Floating Gate Technology - ECC Requirement: 4 bit/512 Byte - Endurance: 100K Program/Erase cycles - Data Retent...

Similar Datasheet

F59L512M81A 512Mbit (64M x 8) 3.3V NAND Flash Memory - Elite Semiconductor

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