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IRGPS66160DPBF

International Rectifier
Part Number IRGPS66160DPBF
Manufacturer International Rectifier
Description Insulated Gate Bipolar Transistor
Published Feb 16, 2016
Detailed Description   IRGPS66160DPbF VCES = 600V IC = 160A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 120A Applicati...
Datasheet PDF File IRGPS66160DPBF PDF File

IRGPS66160DPBF
IRGPS66160DPBF

Overview
  IRGPS66160DPbF VCES = 600V IC = 160A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
65V @ IC = 120A Applications  Welding  H Bridge Converters Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   G E n-channel G Gate IRGPS66160DPbF  Super 247  C Collector E Emitter Features Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Benefits High Efficiency in a Wide Range of Applications Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Perfor...


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