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IRGR3B60KD2PBF
Insulated Gate Bipolar Transistor
Description
PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR
TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. Lead-Free Benefits Benchmark Efficienc...
International Rectifier
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IRGR3B60KD2PBF
Insulated Gate Bipolar Transistor
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