Insulated Gate Bipolar Transistor
Description
INSULATED GATE BIPOLAR TRANSISTOR
PD - 95644A
IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF
Features
Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.
Benefits
Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent ...
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