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UDN302

Unisonic Technologies
Part Number UDN302
Manufacturer Unisonic Technologies
Description Power MOSFET
Published Feb 21, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UDN302 P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET „ DESCRIPTION The UDN302 uses advanced...
Datasheet PDF File UDN302 PDF File

UDN302
UDN302

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UDN302 P-CHANNEL 2.
5V SPECIFIED POWERTRENCH MOSFET „ DESCRIPTION The UDN302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
„ FEATURES * RDS(ON)=55mΩ @ VGS=-4.
5V * RDS(ON)=80mΩ @ VGS=-2.
5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 3.
Drain Power MOSFET 2.
Gate 1.
Source „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UDN302L-AE3-R UDN302G-AE3-R Package SOT-23 Pin Assignment 123 SGD Packing Tape Reel „ MARKING NC03 L: Lead Free G: Halogen Free www.
unisonic.
com.
tw Copyright © 2009 Unisonic Technologies Co.
, Ltd 1 of 4 QW-R502-278.
B UDN302 Power MOSFET „ ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS -20 V VGSS ±12 V Continuous Drain Current Pulsed Drain Current ID -2.
4 A IDM -10 A Maximum Power Dissipation PD 0.
5 Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged.
W ℃ ℃ Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL θJA θJC MIN TYP MAX 250 75 UNIT ℃/W ℃/W „ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient BVDSS VGS=0V, ID=-250µA ΔBVDSS/ΔTJ ID=-250µA, Referenced to 25°C Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS(Note) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance IDSS VDS=-16V, VGS=0...


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