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PXAC261212FC

Part Number	PXAC261212FC
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Feb 21, 2016
Detailed Description	PXAC261212FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261212FC is a...
Datasheet	PXAC261212FC PDF File

Overview

PXAC261212FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band.
It features dual-path design, input and output matching, and a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC261212FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-carrier 3GPP WCDMA VDD = 28 V, IDQ = 280 mA, VGS = 2.
62 V, ƒ = 2635 MHz 10 MHz carrier spacing, 8 dB PAR 3.
84 MHz bandwidth 17 Efficiency 16 60 50 15 40 14 Gain 13 30 20 12 10 11 29 c261212fc-gr1c 0 33 37 41 45 49 53 Output Power (dBm) Features • Broadband internal matching • Asymmetric design - Main P1dB = 50 W - Peak P1dB = 75 W • CW performance in Doherty configuration, 2635 MHz, 28 V - O...

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PXAC261212FC Thermally-Enhanced High Power RF LDMOS FET - Infineon

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