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IPZ65R019C7

Infineon
Part Number IPZ65R019C7
Manufacturer Infineon
Description MOSFET
Published Feb 23, 2016
Detailed Description MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C7 650VCoolMOS™C7PowerTransistor IPZ65R019C7 Data...
Datasheet PDF File IPZ65R019C7 PDF File

IPZ65R019C7
IPZ65R019C7

Overview
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C7 650VCoolMOS™C7PowerTransistor IPZ65R019C7 DataSheet Rev.
2.
0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPZ65R019C7 1Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.
CoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.
Theproductportfolio providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability.
Features •IncreasedMOSFETdv/dtruggedness •BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •Easytouse/driveduetodriversourcepinforbettercontrolofthegate.
•Pb-freeplating,halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Benefits •Enablinghighersystemefficiency •Enablinghigherfrequency/increasedpowerdensitysolutions •Systemcost/sizesavingsduetoreducedcoolingrequirements •Highersystemreliabilityduetoloweroperatingtemperatures Applications PFCstagesandhardswitchingPWMstagesfore.
g.
Computing,Server, Telecom,UPSandSolar.
Pleasenote:Thesourceandsensesourcepinsarenotexchangeable.
Theirexchangemightleadtomalfunction.
PG-TO247-4 Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max RDS(on),max Qg.
typ ID,pulse 700 19 215 496 V mΩ nC A Eoss@400V 27 µJ Body diode di/dt 70 A/µs Type/OrderingCode IPZ65R019C7 Package PG-TO 247-4 Marking 65C7019 RelatedLinks see Appendix A Final Data Sheet 2 Rev.
2.
0,2013-04-30 650VCoolMOS™C7PowerTransistor IPZ65R019C7 TableofContents Description .
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