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IPZ60R099P6

Infineon
Part Number IPZ60R099P6
Manufacturer Infineon
Description MOSFET
Published Feb 23, 2016
Detailed Description MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™P6 600VCoolMOS™P6PowerTransistor IPZ60R099P6 Data...
Datasheet PDF File IPZ60R099P6 PDF File

IPZ60R099P6
IPZ60R099P6

Overview
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™P6 600VCoolMOS™P6PowerTransistor IPZ60R099P6 DataSheet Rev.
2.
0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPZ60R099P6 1Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.
CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.
Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler.
Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •BestinclassRDS(on)/package •Easytouse/driveduetodriversourcepinforbettercontrolofthegate •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) •4-pinkelvinsourceconcept Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.
g.
Computing,Server,TelecomandUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.
PG-TO247-4 Drain Pin 1 Gate Pin 4 Driver Source Pin 3 Power Source Pin 2 Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 99 mΩ Qg.
typ 70 nC ID,pulse 109 A Eoss@400V 8.
8 µJ Body diode di/dt 250 A/µs Type/OrderingCode IPZ60R099P6 Package PG-TO 247-4 Marking 6R099P6 RelatedLinks see Appendix A Final Data Sheet 2 Rev.
2.
0,2015-07-13 600VCoolMOS™P6PowerTransistor IPZ60R099P6 TableofContents Description .
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