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CHX2193

United Monolithic Semiconductors
Part Number CHX2193
Manufacturer United Monolithic Semiconductors
Description GaAs Monolithic Microwave IC
Published Feb 26, 2016
Detailed Description CHX2193 RoHS COMPLIANT 7.5-15GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX2193 is a frequenc...
Datasheet PDF File CHX2193 PDF File

CHX2193
CHX2193

Overview
CHX2193 RoHS COMPLIANT 7.
5-15GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX2193 is a frequency multiplier by 2 monolithic circuit.
It is designed for a wide range of applications, from military to commercial communication systems.
The backside of the chip is both RF and DC ground.
This helps to simplify the assembly process.
The circuit is manufactured with a pHEMT process, 0.
25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
Main Features ■ Broadband performance: 6.
25-8.
25 GHz ■ 12dBm output power for +12dBm input power ■ DC power consumption, 60mA @ 3.
5V (with RF) ■ Chip size: 1.
62 x 0.
89 x 0.
10 mm Main Characteristics Tamb.
= 25°C Symbol Parameter Fin Input frequency range Fout Output frequency range Pin Input power Pout Output power for +12dBm input power Min Typ Max Unit 6.
25 8.
25 GHz 12.
5 16.
5 GHz 12 dBm 10 12 16 dBm ESD Protection : Electrostatic discharge sensitive device.
Observe handling precautions ! Ref.
: DSCHX21930036 - 05 Feb 10 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.
A.
S.
Route Départementale 128 - B.
P.
46 - 91401 Orsay Cedex France Tel.
: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHX2193 7.
5-15GHz Frequency Multiplier Electrical Characteristics Tamb = +25°C, V g1 = -0.
9V, Vg2 adjusted for Id = 60mA under RF, Pin=+12dBm Symbol Parameter Min Fin Input frequency range 6.
25 Fout Output frequency range 12.
5 Pin Input power Pout Output power for +12 dBm input power 10 Is/Fo Fin level at the output ( 6.
25 < Fin < 8.
25GHz ), for -8 +12dBm input power VSWRin Input VSWR VSWRout Output VSWR Vd Drain bias voltage Id Bias current (with RF) Typ 12 12 -16 2.
5:1 2.
5:1 3.
5 60 Max 8.
25 16.
5 16 -30 Unit GHz GHz dBm dBm dBm V mA A wire bond of typically 0.
1 to 0.
15nH will improve the input and output matching.
Absolute Maximum Ratings Tamb = +25°C Symbol Parameter Vd Drain bias voltage Id Drain bias current ...


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