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UP1496

Unisonic Technologies
Part Number UP1496
Manufacturer Unisonic Technologies
Description PNP SILICON TRANSISTOR
Published Feb 27, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UP1496 Preliminary PNP SILICON TRANSISTOR PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ...
Datasheet PDF File UP1496 PDF File

UP1496
UP1496


Overview
UNISONIC TECHNOLOGIES CO.
, LTD UP1496 Preliminary PNP SILICON TRANSISTOR PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR „ DESCRIPTION The UTC UP1496 are series of PNP silicon planar transistors which have gain of 500 at IC=100mA.
It can be used in such applications like battery powered circuits and darlington replacements.
3 1 2 SOT-23 „ ORDERING INFORMATION Ordering Number UP1496G-AE3-R Package SOT-23 Pin Assignment 123 EBC Packing Tape Reel „ MARKING U96G www.
unisonic.
com.
tw Copyright © 2010 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R206-095.
b UP1496 Preliminary PNP SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -220 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage Collector Current VEBO IC -5 V -0.
3 A Peak Pulse Current ICM -1 A Base Current Collector Dissipation (Ta=25°С) IB PC -200 500 mA mW Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=-100 µA Collector-Emitter Breakdown Voltage BVCEO IC=-10 mA (Note) Emitter-Base Breakdown Voltage BVEBO IE =-100 µA Collector Cutoff Current ICBO VCB=-200 V Emitter Cutoff Current IEBO VEB=-4 V Collector -Emitter Cut-off Current ICES VCES=-200 V VCE=-10V , IC=-1mA DC Current Transfer Ratio hFE VCE=-10V , IC=-100mA (Note) VCE=-10V , IC=-250mA (Note) VCE=-10V , IC=-400mA (Note) Base-Emitter Turn-On Voltage VBE(ON) VCE=-10V , IC =-250 mA (Note) Collector-Emitter Saturation Voltage VCE(SAT) IC=-100mA, IB=-10mA IC=-250mA, IB=-25mA (Note) Base-Emitter Saturation Voltage VBE(SAT) IC=-250mA, IB=-25mA (Note) Transition Frequency fT VCE ...


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