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SQ3469EV

Vishay
Part Number SQ3469EV
Manufacturer Vishay
Description Automotive P-Channel MOSFET
Published Feb 29, 2016
Detailed Description www.vishay.com SQ3469EV Vishay Siliconix Automotive P-Channel 20 V (D-S) 175 °C MOSFET TSOP-6 Single S 4 D 5 D 6 3 G...
Datasheet PDF File SQ3469EV PDF File

SQ3469EV
SQ3469EV

Overview
www.
vishay.
com SQ3469EV Vishay Siliconix Automotive P-Channel 20 V (D-S) 175 °C MOSFET TSOP-6 Single S 4 D 5 D 6 3 G 2 D 1 D Top View PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.
5 V ID (A) Configuration -20 0.
036 0.
064 -8 Single FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified c • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 (4) S (3) G (1, 2, 5, 6) D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free TSOP-6 SQ3469EV (for detailed order number please see www.
vishay.
com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage Continuous drain current VGS TC = 25 °Ca TC = 125 °C ID Continuous source current IS Pulsed drain current a IDM Single pulse avalanche current Single pulse avalanche energy L = 0.
1 mH IAS EAS Maximum power dissipation a TC = 25 °C TC = 125 °C PD Operating junction and storage temperature range TJ, Tstg LIMIT -20 ± 20 -8 -5 -6 -32 -17 14 5 1.
6 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction to ambient Junction to foot (drain) Notes a.
Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b.
When mounted on 1" square PCB (FR-4 material) c.
Parametric verification ongoing PCB mount b SYMBOL RthJA RthJF LIMIT 110 30 UNIT °C/W S22-0380-Rev.
B, 02-May-2022 1 Document Number: 67401 For technical questions, contact: automostechsupport@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com SQ3469EV Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state dr...


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