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HY1001P

HOOYI
Part Number HY1001P
Manufacturer HOOYI
Description N-Channel Enhancement Mode MOSFET
Published Mar 1, 2016
Detailed Description HY1001M/P N-Channel Enhancement Mode MOSFET Features • 70V/75A, RDS(ON)=7.8mΩ (typ.) @ VGS=10V • Avalanche Rated • Rel...
Datasheet PDF File HY1001P PDF File

HY1001P
HY1001P

Overview
HY1001M/P N-Channel Enhancement Mode MOSFET Features • 70V/75A, RDS(ON)=7.
8mΩ (typ.
) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management for Inverter Systems.
S D G G D S TO-220 D G Ordering and Marking Information S N-Channel MOSFET P HY1001 ÿ YYWWJ G Package Code P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classi...


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