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PMCM650VNE

NXP
Part Number PMCM650VNE
Manufacturer NXP
Description N-channel Trench MOSFET
Published Mar 4, 2016
Detailed Description WLCSP6 PMCM650VNE 12 V, N-channel Trench MOSFET 7 April 2015 Product data sheet 1. General description N-channel enha...
Datasheet PDF File PMCM650VNE PDF File

PMCM650VNE
PMCM650VNE

Overview
WLCSP6 PMCM650VNE 12 V, N-channel Trench MOSFET 7 April 2015 Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
2.
Features and benefits • Low threshold voltage • Ultra small package: 0.
98 × 1.
48 × 0.
35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.
Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon dr...


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