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BLS7G3135L-350P

Part Number	BLS7G3135L-350P
Manufacturer	NXP
Description	LDMOS S-band radar power transistor
Published	Mar 7, 2016
Detailed Description	BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev. 3 — 29 October 2013 Product data sheet 1. P...
Datasheet	BLS7G3135L-350P PDF File

Overview

BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev.
3 — 29 October 2013 Product data sheet 1.
Product profile 1.
1 General description 350 W LDMOS power transistor intended for radar applications in the 3.
1 GHz to 3.
5 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit.
Test signal f (GHz) VDS PL Gp D (V) (W) (dB) (%) tr tf (ns) (ns) pulsed RF 3.
1 32 350 12 43 5 5 3.
3 32 350 12 43 5 5 3.
5 32 350 10 39 5 5 1.
2 Features and benefits  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Excellent rug...

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