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IRG8P08N120KD-EPbF

International Rectifier
Part Number IRG8P08N120KD-EPbF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Mar 8, 2016
Detailed Description   IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF VCES = 1200V IC = 8A, TC =100°C Insulated Gate Bipolar Transist...
Datasheet PDF File IRG8P08N120KD-EPbF PDF File

IRG8P08N120KD-EPbF
IRG8P08N120KD-EPbF

Overview
  IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF VCES = 1200V IC = 8A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C tSC 10µs, TJ(max) = 150°C VCE(ON) typ.
= 1.
7V @ IC = 5A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding Features Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant G E n-channel GCE TO-220AB IRG8B08N120KDPbF GCE TO-247AC IRG8P08N120KDPbF GC E TO-247AD IRG8P08N120KD-EPbF G Gate C Collector E Emitter Benefits  High Efficiency in a Motor Drive Applications Increases margin for short circuit protection scheme ...


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