INSULATED GATE BIPOLAR TRANSISTOR
Description
VCES = 1200V IC = 40A, TC =100°C
IRG8P40N120KDPbF IRG8P40N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 25A
Applications
Industrial Motor Drive UPS Solar Inverters Welding
Features Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature...
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