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3135GN-280LV

Microsemi
Part Number 3135GN-280LV
Manufacturer Microsemi
Description S-Band Radar
Published Mar 9, 2016
Detailed Description 3135GN-280LV 280 Watts • 50 Volts • 200  s, 20% S-Band Radar 3100 - 3500 MHz GENERAL DESCRIPTION The 3135GN-280LV is a...
Datasheet PDF File 3135GN-280LV PDF File

3135GN-280LV
3135GN-280LV

Overview
3135GN-280LV 280 Watts • 50 Volts • 200  s, 20% S-Band Radar 3100 - 3500 MHz GENERAL DESCRIPTION The 3135GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 13 dB gain, 280 Watts of pulsed RF output power at 200  S pulse width, 20% duty factor across the 3100 to 3500 MHz band.
This hermetically sealed transistor is utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
Market Application – High Power S-Band Pulsed Radar ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C 616 W Maximum Voltage and Current Drain-Source Voltage (VDSS) Gate-Source Voltage...


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