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JCS640FH

JILIN SINO-MICROELECTRONICS
Part Number JCS640FH
Manufacturer JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Published Mar 11, 2016
Detailed Description N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS ID 18A VDSS 200 V Rdson-max （@Vgs=10V） 0.15Ω Qg-typ 27.5nC ...
Datasheet PDF File JCS640FH PDF File

JCS640FH
JCS640FH

Overview
N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS ID 18A VDSS 200 V Rdson-max （@Vgs=10V） 0.
15Ω Qg-typ 27.
5nC Package    UPS APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS FEATURES  Low gate charge  Crss ( 25pF) Low Crss (typical 25pF )  Fast switching  100% avalanche tested  dv/dt Improved dv/dt capability RoHS RoHS product ORDER MESSAGE Order codes JCS640VH-O-V-N-B JCS640RH-O-R-N-B JCS640RH-O-R-N-A JCS640CH-O-C-N-B JCS640FH-O- F-N-B Marking JCS640VH JCS640RH JCS640RH JCS640CH JCS640FH Package Halogen Free Packaging IPAK DPAK DPAK TO-220C TO-220MF NO NO NO NO NO Tube Tube Brede Tube Tube Device Weight 0.
35 g(typ) 0.
35 g(typ) 0.
35 g(typ) 2.
06 g(typ) 2.
22 g(typ) ：201510B 1/12 R ABSOLUTE RATINGS (Tc=25℃) Value Parameter － Drain-Source Voltage Symbol VDSS JCS640VH/RH/CH 200 Drain Current -continuous （ 1） Drain Current -pulse （note 1） Gate-Source Voltage （ 2） ID T=25℃ T=100℃ IDM VGSS 18 16 72 ±30 Single Pulsed Avalanche Energy（note 2） EAS （ 1） Avalanche Current（note 1） IAR （ 1） 259 18 Repetitive Avalanche Current （note 1） EAR 14 （ 3） Peak Diode Recovery dv/dt （note 3） dv/dt 5.
5 Power Dissipation PD TC=25℃ -Derate above 25℃ 140 1.
12 Operating and Storage Temperature Range TJ，TSTG -55～+150 Maximum Lead Temperature for Soldering TL 300 Purposes * *Drain current limited by maximum junction temperature JCS640H JCS640FH 18* 16* 72* Unit V A A A V mJ A 4.
4 mJ V/ns 44 W 0.
35 W/℃ ℃ ℃ ：201510B 2/12 R ELECTRICAL CHARACTERISTIC JCS640H Parameter Off –Characteristics － Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input capacitance ...


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