DatasheetsPDF.com

P4NC50

STMicroelectronics
Part Number P4NC50
Manufacturer STMicroelectronics
Description STP4NC50
Published Mar 13, 2016
Detailed Description STP4NC50 STP4NC50FP N-CHANNEL 500V - 2.2Ω - 3.5A TO-220/TO-220FP PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STP4NC50 ...
Datasheet PDF File P4NC50 PDF File

P4NC50
P4NC50


Overview
STP4NC50 STP4NC50FP N-CHANNEL 500V - 2.
2Ω - 3.
5A TO-220/TO-220FP PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STP4NC50 500 V < 2.
7 Ω 3.
5 A STP4NC50FP 500 V < 2.
7 Ω 3.
5 A s TYPICAL RDS(on) = 2.
2 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.
The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES 3 2 1 TO-220 3 2 1 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuos) at TC = 25°C ID Drain Current (continuos) at TC = 100°C IDM (q) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max.
Operating Junction Temperature (•)Pulse width limited by safe operating area October 2000 Value Unit STP4NC50 STP4NC50FP 500 V 500 V ±30 V 3.
5 3.
5(*) A 2.
2 2.
2(*) A 14 14(*) A 80 40 W 0.
64 0.
32 W/°C 3.
5 V/ns - 2000 V –65 to 150 °C 150 (1)ISD ≤3.
5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*).
Limited only by maximum temperature allowed °C 1/9 STP4NC50/FP THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-220 1.
56 62.
5 0.
5 300 TO-220FP 3.
12 AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repet...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)