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BUK9K8R7-40E

NXP
Part Number BUK9K8R7-40E
Manufacturer NXP
Description Dual N-channel MOSFET
Published Mar 16, 2016
Detailed Description LFPAK56D BUK9K8R7-40E Dual N-channel 40 V, 9.4 mΩ logic level MOSFET 10 December 2013 Product data sheet 1. General...
Datasheet PDF File BUK9K8R7-40E PDF File

BUK9K8R7-40E
BUK9K8R7-40E

Overview
LFPAK56D BUK9K8R7-40E Dual N-channel 40 V, 9.
4 mΩ logic level MOSFET 10 December 2013 Product data sheet 1.
General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2.
Features and benefits • Dual MOSFET • Q101 Compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greater than 0.
5 V at 175 °C 3.
Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig.
1 Ptot total power dissipation Tmb = 25 °C; Fig.
2 Static characteristics FET1 and ...


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