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WFP75N75

Wisdom technologies
Part Number WFP75N75
Manufacturer Wisdom technologies
Description N-Channel MOSFET
Published Mar 16, 2016
Detailed Description Wisdom Semiconductor WFP75N75 N-Channel MOSFET Features ■ RDS(on) (Max 0.017 Ω )@VGS=10V ■ Gate Charge (Typical 85nC)...
Datasheet PDF File WFP75N75 PDF File

WFP75N75
WFP75N75

Overview
Wisdom Semiconductor WFP75N75 N-Channel MOSFET Features ■ RDS(on) (Max 0.
017 Ω )@VGS=10V ■ Gate Charge (Typical 85nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (175°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Symbol 1.
Gate{ { 2.
Drain ● ◀▲ ● ● { 3.
Source TO-220 123 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Min.
- (Note 1) (Note 2) (Note 1) (Note 3) Value 75 75 52.
5 300 ±20 1350 19.
0 7.
0 190 1.
27 - 55 ~ 175 300 Value Typ.
0.
5 - Max.
0.
79 62.
5 Units V A A A V mJ mJ V/ns W W/°C °C °C Units °C/W °C/W °C/W Copyright@Wisdom Semiconductor Inc.
, All rights reserved.
WFP75N75 Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Off Characteristics BVDSS Drain-Source Breakdown Voltage Δ BVDSS/ Breakdown Voltage Temperature Δ TJ coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage, Forward Gate-source Leakage, Reverse On Characteristics VGS(th) Gate Threshol...


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