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STH360N4F6-2

Part Number	STH360N4F6-2
Manufacturer	STMicroelectronics
Description	N-channel Power MOSFET
Published	Mar 17, 2016
Detailed Description	STH360N4F6-2 Features N-channel 40 V, 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet − prelimi...
Datasheet	STH360N4F6-2 PDF File

Overview

STH360N4F6-2 Features N-channel 40 V, 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet − preliminary data Order code STH360N4F6-2 VDSS 40 V RDS(on) max ID < 1.
25 mΩ 180 A(1) 1.
Current limited by package ■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
TAB 2 3 1 H2PAK-2 Figure 1.
Internal schematic diagram $4!" ' Table 1.
Device summary Order code STH360N4F6-2 Marking 360N...

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STH360N4F6-2 N-channel Power MOSFET - STMicroelectronics

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