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DMN2100UDM

Diodes

N-Channel MOSFET


Description
NEW PRODUCT Product Summary V(BR)DSS 20V RDS(ON) max 55mΩ @ VGS = 4.5V 70mΩ @ VGS = 2.5V 90mΩ @ VGS = 1.8V 130mΩ @ VGS = 1.5V ID max TA = 25°C 4.0A 3.5A 3.1A 2.5A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high...



Diodes

DMN2100UDM

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