Linear Low Noise SiGe:C Bipolar RF Transistor
For medium power amplifiers and driver stages Based on Infineon' s reliable high volume Silicon
Germanium technology High OIP3 and P-1dB Ideal for low phase noise oscilators Maxim. available Gain Gma = 21.5 dB at 1.8 GHz
Minimun noise figure NFmin = 0.8 dB at 1.8 GHz Pb-free (RoHS compliant) and halog...
