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RN1113F

Part Number	RN1113F
Manufacturer	Toshiba
Description	Silicon NPN Epitaxial Type Transistor
Published	Mar 20, 2016
Detailed Description	RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112F,RN1113F Switching, Inverter Circu...
Datasheet	RN1113F PDF File

Overview

RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2112F, RN2113F Equivalent Circuit Maximum Ratings (Ta = 25°C) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 Unit JEDEC V EIAJ V TOSHIBA 5V 100 mA 100 mW 150 °C −55~150 °C ― ― 2-2HA1A Ele...

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