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KTK5132V

KEC
Part Number KTK5132V
Manufacturer KEC
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Published Mar 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Driv...
Datasheet PDF File KTK5132V PDF File

KTK5132V
KTK5132V

Overview
SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.
5 Gate Drive.
Low Threshold Voltage : Vth=0.
5 High Speed.
Small Package.
Enhancement-Mode.
1.
5V.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage VDS VGSS DC Drain Current ID Drain Power Dissipation PD Channel Temperature Tch Storage Temperature Range Tstg RATING 30 20 100 100 150 -55 150 UNIT V V mA mW EQUIVALENT CIRCUIT KTK5132V N CHANNEL MOS FIELD EFFECT TRANSISTOR ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Gate Leakage Current Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Forward Transfer Admittance Drain-Source ON Resistance Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Time Turn-on Time Turn-off Time IGSS V(BR)DSS IDSS Vth |Yfs| RDS(ON) Ciss Crss Coss ton toff TEST CONDITION VGS= 16V, VDS=0V ID=100 A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=0.
1mA VDS=3V, ID=10mA ID=10mA, VGS=2.
5V VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz VDD=5V, ID=10mA, VGS=0 5V 2014.
8.
07 Revision No : 1 MIN.
30 0.
5 25 - TYP.
4 8.
5 3.
3 9.
3 50 180 MAX.
1 1 1.
5 7 - UNIT A V A V mS pF pF pF nS nS 1/3 KTK5132V 2014.
8.
07 Revision No : 1 2/3 KTK5132V 2014.
8.
07 Revision No : 1 3/3 ...


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