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WNM4001

Will Semiconductor
Part Number WNM4001
Manufacturer Will Semiconductor
Description Small Signal N-Channel MOSFET
Published Mar 21, 2016
Detailed Description WNM4001 Small Signal N-Channel, 20V, 0.5A, MOSFET V(BR)DSS 20 V RDS(on) Max. 0.7ȍ@ 4.5V 0.85ȍ@ 2.5V 1.25ȍ@ 1.8V ID MA...
Datasheet PDF File WNM4001 PDF File

WNM4001
WNM4001

Overview
WNM4001 Small Signal N-Channel, 20V, 0.
5A, MOSFET V(BR)DSS 20 V RDS(on) Max.
0.
7ȍ@ 4.
5V 0.
85ȍ@ 2.
5V 1.
25ȍ@ 1.
8V ID MAX 0.
5A 0.
3A 0.
1A Descriptions The WNM4001 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in small signal switch.
Standard product WNM4001 is Pb-free.
Features z Trench N-Channel z Supper high density cell design for extremely low Rds(on) z Exceptional ON resistance and maximum DC current capability z Small package design with SOT-523 WNM4001 Http://www.
willsemi.
com Top D 3 12 GS SOT-523 D 3 12 GS Pin Configuration 3 N3 * 12 N3 = Device...


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