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KTC812T

KEC
Part Number KTC812T
Manufacturer KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Published Mar 22, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA FOR MUTING AND SWITCHING APPLICATION. FEATURES High Emitter-Base Voltage : VEBO=25V(Min.) H...
Datasheet PDF File KTC812T PDF File

KTC812T
KTC812T

Overview
SEMICONDUCTOR TECHNICAL DATA FOR MUTING AND SWITCHING APPLICATION.
FEATURES High Emitter-Base Voltage : VEBO=25V(Min.
) High Reverse hFE : Reverse hFE=150(Typ.
) (VCE=-2V, IC=-4mA) Low on Resistance : RON=1 (Typ.
), (IB=5mA) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 50 Collector-Emitter Voltage VCEO 20 Emitter-Base Voltage VEBO 25 Collector Current IC 300 Base Current IB 60 Collector Power Dissipation PC * 0.
9 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Package mounted on a ceramic board (600 0.
8 ) EQUIVALENT CIRCUIT (TOP VIEW) 65 4 UNIT V V V mA mA W Q1 Q2 C L A F GG KTC812T EPITAXIAL PLANAR NPN TRANSI...


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